 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| PD- 95160A IRF5803D2PBF l l l l l l Co-packaged HEXFET(R) Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET(R) Low VF Schottky Rectifier SO-8 Footprint Lead-Free FETKY MOSFET & Schottky Diode A A S G 1 8 TM K K D D VDSS = -40V RDS(on) = 112m Schottky Vf = 0.51V 2 7 3 6 4 5 Description The FETKYTM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques. Top View SO-8 Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C VGS TJ, TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current A Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Maximum -3.4 -2.7 -27 2.0 1.3 16 20 -55 to +150 Units A W mW/C V C Thermal Resistance Symbol RJL RJA RJA Parameter Junction-to-Drain Lead, MOSFET Junction-to-Ambient , MOSFET Junction-to-Ambient , SCHOTTKY Typ. --- --- --- Max. 20 62.5 62.5 Units C/W Notes: Repetitive rating - pulse width limited by max. junction temperature (see fig. 11) Pulse width 400s - duty cycle 2% Surface mounted on 1 inch square copper board, t 10sec. www.irf.com 1 10/7/04 IRF5803D2PBF V(BR)DSS V(BR)DSS/TJ Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -40 --- --- --- -1.0 4.0 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- -0.03 --- --- --- --- --- --- --- --- 25 4.5 3.5 43 550 88 50 1110 93 73 Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 112 VGS = -10V, ID = -3.4A m 190 VGS = -4.5V, ID = -2.7A -3.0 V VDS = VGS, ID = -250A --- S VDS = -10V, ID = -3.4A -10 VDS = -32V, VGS = 0V A -25 VDS = -32V, VGS = 0V, TJ = 70C -100 VGS = -20V nA 100 VGS = 20V 37 ID = -3.4A 6.8 nC VDS = -20V 5.3 VGS = -10V, See Fig. 6 & 14 65 VDD = -20V 825 ID = -1.0A ns 130 RG = 6.0 75 VGS = -10V, --- VGS = 0V --- pF VDS = -25V --- = 100kHz, See Fig. 5 RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss MOSFET Source-Drain Ratings and Characteristics IS I SM VSD trr Qrr Parameter Min. Continuous Source Current(Body Diode) --- Pulsed Source Current (Body Diode) --- Body Diode Forward Voltage --- Reverse Recovery Time (Body Diode) --- Reverse Recovery Charge --- Parameter Max. Average Forward Current Max. peak one cycle Non-repetitive Surge current Typ. Max. Units Conditions --- -2.0 A --- -27 --- -1.2 V TJ = 25C, IS = -2.0A, VGS = 0V 27 40 ns TJ = 25C, IF = -2.0A 34 50 nC di/dt = 100A/s Conditions 50% Duty Cycle. Rectangular Waveform, TA =30C See Fig.21 5s sine or 3s Rect. pulse Following any rated 10ms sine or 6ms Rect. pulse load condition & with Vrrm applied Schottky Diode Maximum Ratings If (av) ISM Max. Units 3.0 A 340 70 A Schottky Diode Electrical Specifications Vfm Parameter Max. Forward Voltage Drop Max. Units 0.51 0.63 V 0.44 0.59 40 V 3.0 mA 37 405 pF Conditions If = 5.0A, Tj = 25C If = 10A, Tj = 25C If = 5.0A, Tj = 125C If = 10A, Tj = 125C Tj = 25C Tj = 125C Vr = 5Vdc ( 100kHz to 1 MHz) 25C Vr = 40V Vrrm Irm Ct Max. Working Peak Reverse Voltage Max. Reverse Leakage Current Max. Junction Capacitance 2 www.irf.com IRF5803D2PBF Power Mosfet Characteristics 100 100 VGS TOP -15V -10V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM - 2.7V VGS -15V -10V -4.5V -3.7V -3.5V -3.3V -3.0V BOTTOM - 2.7V TOP -ID, Drain-to-Source Current (A) -ID, Drain-to-Source Current (A) 10 10 1 1 -2.7V 0.1 0.1 20s PULSE WIDTH Tj = 25C -2.7V 0.01 0.1 1 10 100 20s PULSE WIDTH Tj = 125C 0.01 0.1 1 10 100 -VDS, Drain-to-Source Voltage (V) -VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) 100 2.0 ID = -3.4A -I D , Drain-to-Source Current (A) TJ = 25 C 1.5 10 TJ = 150 C 1.0 1 0.5 0.1 2.0 V DS = -25V 20s PULSE WIDTH 3.0 4.0 5.0 6.0 7.0 8.0 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 -VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRF5803D2PBF Power Mosfet Characteristics 2000 12 Cds -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 100 KHZ C iss = Cgs + Cgd , SHORTED Crss = Cgd Coss = Cds + Cgd ID = -3.4A 10 V DS=-32V V DS=-20V 1500 C, Capacitance(pF) 8 Ciss 1000 6 4 500 Coss Crss 0 1 10 100 2 0 0 5 10 15 20 25 30 - V , Drain-to-Source Voltage (V) DS QG , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 100 -ID, Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R (on) DS TJ = 150 C 10 10 TJ = 25 C 1 100sec 1 1msec TA = 25C TJ = 150C Single Pulse 0.1 1 10 -VDS , Drain-toSource Voltage (V) 100 10msec 0.1 0.4 V GS = 0 V 0.8 1.2 1.6 -VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRF5803D2PBF Power Mosfet Characteristics 3.5 V DS 3.0 RD V GS RG V GS Pulse Width 1 s Duty Factor 0.1 % -ID , Drain Current (A) D.U.T. + 2.0 1.5 1.0 0.5 VGS Fig 10a. Switching Time Test Circuit td(on) tr t d(off) tf 0.0 25 50 75 100 125 150 10% TC , Case Temperature ( C) 90% Fig 9. Maximum Drain Current Vs. Case Temperature VDS Fig 10b. Switching Time Waveforms 100 Thermal Response(Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100 0.1 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com - 2.5 V DD 5 IRF5803D2PBF Power Mosfet Characteristics ( , RDS(on) Drain-to -Source On Resistance) 0.20 RDS ( on ) , Drain-to-Source On Resistance ) ( 0.40 VGS = -4.5V 0.30 0.15 0.10 ID = -3.4A 0.20 0.05 VGS = -10V 0.10 0.00 4.0 8.0 12.0 16.0 0.00 0.0 5.0 10.0 15.0 -ID , Drain Current ( A ) -VGS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage Fig 13. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50K QG QGS VG QGD 12V .2F .3F VGS -3mA Charge IG ID Current Sampling Resistors Fig 14a. Basic Gate Charge Waveform Fig 14b. Gate Charge Test Circuit 6 www.irf.com + D.U.T. - VDS IRF5803D2PBF Power Mosfet Characteristics 30 2.8 25 ID = -250A -VGS(th) ( V ) 2.4 20 Power (W) 15 10 2.0 5 1.6 -75 -50 -25 0 25 50 75 100 125 150 0 0.001 0.010 0.100 1.000 10.000 100.000 TJ , Temperature ( C ) Time (sec) Fig 15. Typical Vgs(th) Vs. Junction Temperature Fig 16. Typical Power Vs. Time www.irf.com 7 IRF5803D2PBF Schottky Diode Characteristics 100 100 T J = 150C Reverse Current - I R (mA) 10 125C 100C 1 75C 50C 0.1 Instantaneous Forward Current - I F (A) 0.01 25C T J = 150C T J = 125C 10 T J = 25C 0.001 0 5 10 15 20 25 30 35 40 Reverse Voltage - V R (V) Fig. 18 - Typical Values of Reverse Current Vs. Reverse Voltage 1000 Junction Capacitance - C T (pF) T J = 25C 1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 Forward Voltage Drop - VFM (V) 100 Fig. 17 - Maximum Forward Voltage Drop Characteristics 0 5 10 15 20 25 30 35 40 45 Reverse Voltage - V R (V) Fig. 19 - Typical Junction Capacitance Vs. Reverse Voltage 8 www.irf.com IRF5803D2PBF Schottky Diode Characteristics 100 D = 0.50 Thermal Response(Z thJA ) 10 0.20 0.10 0.05 0.02 1 0.01 PDM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D =t 1 / t 2 2. Peak T = P DM x ZthJA + TA J 0.0001 0.001 0.01 0.1 1 10 100 0.1 0.01 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 180 Allowable Ambient Temprature - (C) 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 RthJA = 62.5 C/W DC see note (4) Square wave ( D = 0.50) 80 % Rated V applied R Average Forward Current - F(AV) (A) I Fig.21 - Maximum Allowable Ambient Temp. Vs. Forward Current Note (4) Formula used: TC = TJ - (Pd + PdREV) x RthJA ; Pd = Forward Power Loss = IF(AV) x VFM @ (IF(AV) / D) ; PdREV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR www.irf.com 9 IRF5803D2PBF SO-8 (Fetky) Package Outline Dimensions are shown in millimeters (inches) D A 5 B DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00 A1 .0040 8 6 E 1 7 6 5 H 0.25 [.010] A c D E e e1 H K L y 2 3 4 .050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8 1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8 6X e e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y K x 45 8X L 7 8X c NOT ES: 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE S HOWN IN MILLIMETERS [INCHES ]. 4. OUT LINE CONFORMS TO JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROTRUS IONS NOT TO EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROTRUS IONS NOT TO EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGTH OF LEAD FOR S OLDERING TO A SUBST RATE. 3X 1.27 [.050] 6.46 [.255] FOOT PRINT 8X 0.72 [.028] 8X 1.78 [.070] SO-8 (Fetky) Part Marking Information EXAMPLE: T HIS IS AN IRF7807D1 (FET KY) DAT E CODE (YWW) P = DIS GNAT ES LEAD - FREE PRODUCT (OPTIONAL) Y = LAS T DIGIT OF THE YEAR WW = WEEK A = AS S EMBLY S ITE CODE LOT CODE PART NUMBER INT ERNAT IONAL RECT IFIER LOGO XXXX 807D1 10 www.irf.com IRF5803D2PBF SO-8 (Fetky) Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.10/04 www.irf.com 11 |
Price & Availability of IRF5803D2PBF
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |